论文著作:
(1)H. Jiang*, S. Zhu*, Z. Cui, Z. Li, Y. Liang, J. Zhu, P. Hu, H.-L. Zhang*, W. Hu*, High-Performance Five-Ring-Fused Organic Semiconductors for Field-Effect Transistors,Chem. Soc. Rev.,2022,51, 3071-3122.
(2)H. Jiang*, J. Ye, P. Hu, S. Zhu*, Y. Liang, Z. Cui, C. Kloc, W. Hu*, Growth Direction Dependent Separate-Channel Charge Transport in the Organic Weak Charge-Transfer Co-Crystal of Anthracene-DTTCNQ,Mater. Horiz.,2022,9, 1057-1067.
(3) P. Hu, X. He,H. Jiang*, Greater than 10 cm2V−1s−1: A Breakthrough of Organic Semiconductors for Field-Effect Transistors,InfoMat,2021,6, 613-630.
(4)H. Jiang,W. Hu*,The Emergence of Organic Single Crystal Electronics,Angew. Chem. Int. Ed.,2020,59,1408-1428.
(5) J.Liu, L. Jiang, J. Shi, J. Tan, H. Li,H. Jiang*, Y. Hu, X. Liu, J.Yu*, Z. Wei, L. Jiang*, W. Hu, Relieving the Photosensitivity of Organic Field-Effect Transistors,Adv. Mater.,2020,32, e1906122.
(6) P. Hu, X. He, M. Ng, J. Ye, C. Zhao, S. Wang, K. Tan, A. Chaturvedi,H. Jiang*, C. Kloc, W. Hu*, Y. Long*,Trisulfide Bonds Acenes for Organic Battery,Angew. Chem. Int. Ed.,2019,58, 13513-13521.
(7)H. Jiang*, P. Hu, J. Ye, R. Ganguly, Y. Li, D. Fichou*, W. Hu*, C. Kloc*,Hole MobilityModulationin Single Crystal Metal Phthalocyanines by Tuning the Metal-p/p-pInteractions,Angew. Chem. Int. Ed.,2018,57, 10112-10117.
(8)H. Jiang*, P. Hu, J. Ye, A. Chaturvedi, K. K. Zhang, Y. Li, Y. Long, D. Fichou*, C. Kloc*, W. Hu*, From Linear to Angular Isomers: Achieving Tunable Charge Transport in Single Crystal Indolocarbazoles via Delicate Synergetic CH/NH···pInteractions,Angew. Chem. Int. Ed.,2018,57, 8875-8880.
(9)H. Jiang*, P. Hu, J. Ye, Y. Li, H. Li, X. Zhang, R. Li, H. Dong, W. Hu*, C. Kloc*, Molecular Crystal Engineering: Tuning Organic Semiconductor from p-type to n-type by Adjusting Their Substitutional Symmetry,Adv. Mater.,2017,29, 1605053.
(10)H. Jiang*, H. Zhao, K. K. Zhang, X. Chen, W. Hu, C. Kloc*, W. Hu*, High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices,Adv. Mater.,2011,23, 5075-5080.